document number: 86061 for technical questions within your region, please contact one of the following: www.vishay.com rev. 1.8, 25-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 91 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultra-fast avalanche sinterglass diode sf5400, sf5401, sf5402, sf5403, sf5404, sf5405, sf5406, sf5407, SF5408 vishay semiconductors mechanical data case: sod-64 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 858 mg features ? glass passivated ? hermetically sealed axial leaded glass envelope ? low reverse current ? high reverse voltage ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? switched mode power supplies ? high-frequency inverter circuits 949588 parts table part type differe ntiation package sf5400 v r = 50 v; i fav = 3 a sod-64 sf5401 v r = 100 v; i fav = 3 a sod-64 sf5402 v r = 200 v; i fav = 3 a sod-64 sf5403 v r = 300 v; i fav = 3 a sod-64 sf5404 v r = 400 v; i fav = 3 a sod-64 sf5405 v r = 500 v; i fav = 3 a sod-64 sf5406 v r = 600 v; i fav = 3 a sod-64 sf5407 v r = 800 v; i fav = 3 a sod-64 SF5408 v r = 1000 v; i fav = 3 a sod-64 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics sf5400 v r = v rrm 50 v sf5401 v r = v rrm 100 v sf5402 v r = v rrm 200 v sf5403 v r = v rrm 300 v sf5404 v r = v rrm 400 v sf5405 v r = v rrm 500 v sf5406 v r = v rrm 600 v sf5407 v r = v rrm 800 v SF5408 v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sine wave i fsm 150 a average forward current i fav 3a junction and storage temperature range t j = t stg - 55 to + 175 c non repetitive reverse avalanche energy i (br)r = 0.4 a e r 10 mj
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86061 92 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.8, 25-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sf5400, sf5401, sf5402, sf5403, sf5404, sf5405, sf5406, sf5407, SF5408 vishay semiconductors ultra-fast avalanche sinterglass diode typical characteristics (t amb = 25 ? c, unless otherwise specified) fig. 1 - max. thermal resistance vs. lead length fig. 2 - max. average forward current vs. ambient temperature maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 25 k/w on pc board with spacing 25 mm r thja 70 k/w electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 3 a sf5400 v f --1.1v sf5401 v f --1.1v sf5402 v f --1.1v sf5403 v f --1.1v sf5404 v f --1.1v sf5405 v f --1.7v sf5406 v f --1.7v sf5407 v f --1.7v SF5408 v f --1.7v reverse current v r = v rrm i r --5a v r = v rrm , t j = 125 c i r - - 50 a reverse breakdown voltage i r = 100 a sf5400 v(br)r 60 - - v sf5401 v(br)r 110 - - v sf5402 v(br)r 220 - - v sf5403 v(br)r 330 - - v sf5404 v(br)r 440 - - v sf5405 v(br)r 550 - - v sf5406 v(br)r 660 - - v sf5407 v(br)r 880 - - v SF5408 v(br)r 1100 - - v reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a sf5400 t rr - - 50 ns sf5401 t rr - - 50 ns sf5402 t rr - - 50 ns sf5403 t rr - - 50 ns sf5404 t rr - - 50 ns sf5405 t rr - - 75 ns sf5406 t rr - - 75 ns sf5407 t rr - - 75 ns SF5408 t rr - - 75 ns 0 10 20 30 40 15 10 5 0 202530 r thja - ther. re s i s t. junction/ambient (k/w) l - lead length (mm) 949548 ll t l = con s tant 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 20 40 60 80 100 120 140 160 180 96 12132 t amb - ambient temperature (c) i fav - average forward current (a) v r = v rrm f 1 khz r thja 70 k/w pc board s f5400 to s f5404
document number: 86061 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.8, 25-may-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 93 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sf5400, sf5401, sf5402, sf5403, sf5404, sf5405, sf5406, sf5407, SF5408 ultra-fast avalanche sinterglass diode vishay semiconductors fig. 3 - max. average forward current vs. ambient temperature fig. 4 - max. average forward current vs. ambient temperature fig. 5 - max. average forward current vs. ambient temperature fig. 6 - max. forward current vs. forward voltage fig. 7 - max. forward current vs. forward voltage fig. 8 - max. reverse curre nt vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 20 40 60 80 100 120 140 160 180 96 12133 v r = v rrm f 1 khz r thja 70 k/w pc board s f5405 to s f5408 t amb - ambient temperature (c) i fav - average forward current (a) 96 12061 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 20 40 60 80 100 120 140 160 180 v r = v rrm f 1 khz r thja 25 k/w l = 10 mm s f5400 to s f5404 t amb - ambient temperature (c) i fav - average forward current (a) 96 12062 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) i fav - average forward current (a) s f5405 to s f5408 v r = v rrm f 1 khz r thja 25 k/w l = 10 mm 0.001 0.01 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 96 12057 v f - forward voltage (v) i f - forward current (a) s f5400 to s f5404 t j = 175 c t j = 25 c 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 96 12059 v f - forward voltage (v) i f - forward current (a) s f5405 to s f5408 t j = 175 c t j = 25 c 96 12065 1 10 100 1000 25 50 75 100 125 150 175 t j - junction temperature (c) i r - rever s e current (a) s f5400 to s f5408 v r = v rrm
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86061 94 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.8, 25-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sf5400, sf5401, sf5402, sf5403, sf5404, sf5405, sf5406, sf5407, SF5408 vishay semiconductors ultra-fast avalanche sinterglass diode fig. 9 - max. reverse power dissipation vs. junction temperature fig. 10 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-64 0 50 100 150 200 250 300 350 400 450 25 50 75 100 125 150 175 16478 t j - junction temperature (c) p r - rever s e power di ss ipation (mw) v r = v rrm s f5404 s f5404 s f5408 p r - limit at 100 % v r s f5408 p r - limit at 80 % v r p r - limit at 100 % v r p r - limit at 80 % v r 0 20 40 60 80 100 120 0.1 1 10 100 16479 f = 1 mhz s f5404 s f5408 v r - rever s e voltage (v) c d - diode capacitance (pf) cathode identification 4.3 (0.168) max. 1.35 (0.053) max. 4 (0.156) max. sintered glass case sod-64 26(1.014) min. 26 (1.014) min. document-no.: 6.563-5006.4-4 rev. 3 - date: 09.february.2005 94 9587
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